Specification
Kingston 8GB DDR3-1600MHz DIMM
Features:
JEDEC standard 1.5V (1.425~1.575V) Power Supply
VDDQ = 1.5V (1.425~1.575V)
8000MHz fCK for 1600MB/sec/pin
8 independent internal banks
Programmable CAS latency: 11, 10, 9, 8, 7, 6,
Programmable Additive Latency:
0, CL-2, or CL - 1 clock
8-bit pre-fetch
Burst Length:
8 (interleave without any limit, sequential with starting address "000" only), 4 with tCCD = 4 which does not allow seamless read or write
Bi-directional differential Data Strobe
Internal (self) calibration:
Internal self calibration through ZQ pin (RZQ: 240 ohm +- 1%)
On Die Termination using ODT pin
Average Refresh Period 7.8us at lower than TCASE 85 Degree Celcius, 3.9us 85Asynchronous Reset
PCB: Height 0.740" (18.75mm) or 1.180" (30.00mm)
Specifications:
CL(IDD): 11 cycles
Row Cycle Time (tRCmin): 48.125(min)
Refresh to Active/Refresh Command Time (tRFCmin): 260ns(min)
Row Active Time (tRASmin): 35ns(min)
Maximum Operating Power: TBD W
UL Rating: 94V - 0
Operating Temperature: 0 C to +85 C
Storage Temperature: -55 C to +100 C