Kingston 4GB DDR3-1600MHz DIMM

Features:
JEDEC standard 1.35V (1.28V~1.45V) and 1.5V (1.425V~1.575V) Power Supply
VDDQ= 1.35V (1.28V~1.45V) and 1.5V (1.425V~1.575V)
800MHz fCK for 1600MB/sec/pin
8 independent internal bank
Programmable CAS Latency: 11, 10, 9, 8, 7, 6
Programmable Additive Latency: 0, CL -2, or CL - 1 clock/ 8-bit pre-fetch
Burst Length:
8 (Interleave without any limit, sequential with starting address "000" only), 4 with tCCD = 4 which does not allow seamless read or write
Bi-directional Differential Data Strobe
Internal(self) calibration:
Internal self calibration through ZQ pin (RZQ: 240 ohm +-1%)
On Die Termination using ODT pin
Average Refresh Period 7.8us at lower than TCASE 85 Degree Celcius, 3.9us at 85Asynchronous Reset
PCB Height: 0.740" (18.75mm) or 1.180" (30.00mm)

Specifications:
CL(IDD): 11 cycles
Row Cycle Time (tRCmin): 48.125ns (min)
Refresh to Active/Refresh Command Time (tRFCmin): 260ns (min)
Row Active Time (tRASmin): 35ns (min)
Maximum Operating Power: (1.35V) = TBD W
UL Rating: 94V - 0
Operating Temperature: 0 to 85 Degree Celcius
Storage Temperature: -55 to 100 Degree Celcius