Kingston 4GB DDR3-1600MHz SO-DIMM

Features:
JEDEC standard 1.5V (1.425V ~1.575V) Power Supply
VDDQ = 1.5V (1.425V ~ 1.575V)
800MHz fCK for 1600Mb/sec/pin
8 independent internal bank
Programmable CAS Latency: 11, 10, 9, 8, 7, 6
Programmable Additive Latency: 0, CL - 2, or CL - 1 clock
8-bit pre-fetch
Burst Length: 8 (Interleave without any limit, sequential with starting address "000" only), 4 with tCCD = 4 which does not allow seamless read or write [either on the fly using A12 or MRS]
Bi-directional Differential Data Strobe
Internal(self) calibration: Internal self calibration through ZQ pin (RZQ: 240 ohm ± 1%)
On Die Termination using ODT pin
Average Refresh Period 7.8us at lower than TCASE 85°C, 3.9us at 85°C < TCASE < 95°C
Asynchronous Reset
PCB: Height 1.180" (30.00mm), double sided component

Specifications:
CL(IDD): 11 Cycles
Row Cycle Time: 48.125ns (min)
Refresh to Active/Refresh Command Time: 260ns (min)
Row Active Time: 35ns (min)
Maximum Operating Power: 2.100 W
UL Rating: 94 V - 0
Operating Temperature: 0 C to 85 C
Storage Temperature: -55 C to +100 C